advanced power p-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss -20v low gate charge r ds(on) 45m fast switching characteristic i d -5.6a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a thermal resistance junction-ambient 3 max. 62.5 /w data and specifications subject to change without notice 200303041 AP4955M rating -20 20 -5.6 parameter drain-source voltage gate-source voltage continuous drain current 3 continuous drain current 3 -4.5 pulsed drain current 1 20 2 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.016 storage temperature range thermal data parameter total power dissipation tthe advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. s1 g1 s2 g2 d1 d1 d2 d2 g2 d2 s2 g1 d1 s1
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -20 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =-1ma - -0.01 -v/ r ds(on) static drain-source on-resistance 2 v gs =-4.5v, i d =-5a - - 45 m v gs =-2.5v, i d =-4a - - 65 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.5 - -1.2 v g fs forward transconductance v ds =-5v, i d =-5a - 9 - s i dss drain-source leakage current (t j =25 o c) v ds =-20v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-16v, v gs =0v - - -25 ua i gss gate-source leakage v gs =20v - - na q g total gate charge 2 i d =-5a - 19 30 nc q gs gate-source charge v ds =-16v - 3 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 6 - nc t d(on) turn-on delay time 2 v ds =-10v - 9 - ns t r rise time i d =-1a - 10 - ns t d(off) turn-off delay time r g =3.3 , v gs =-10v - 52 - ns t f fall time r d =10 -24- ns c iss input capacitance v gs =0v - 1400 2240 pf c oss output capacitance v ds =-20v - 270 - pf c rss reverse transfer capacitance f=1.0mhz - 230 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.6a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =-5a, v gs =0 v , - 32 - ns q rr reverse recovery charge di/dt=100a/s - 22 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on 1 in 2 copper pad of fr4 board ; 135 /w when mounted on min. copper pad. AP4955M 100
AP4955M fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( o c) -v gs(th) (v) 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-5a v g =-10v 0 10 20 30 40 50 60 70 0123456789 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -5.0v -4.5v -3.0v -2.5v v g =- 2.0 v 30 35 40 45 50 55 23456 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-4a t a =25 o c 0 10 20 30 40 50 60 0123456789 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 150 o c -5.0v -4.5v -3.0v -2.5v v g =- 2.0 v 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform AP4955M t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 1ms 10ms 100ms 1s dc 100 1000 10000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0 2 4 6 8 10 12 14 0 1020304050 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d =-5a v ds =-16v 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
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